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2SD1765 Datasheet - INCHANGE

2SD1765 NPN Transistor

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) *Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max.) @IC= 1A *High DC Current Gain : hFE= 1000(Min.) @ IC= 1A, VCE= 2V *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS.

2SD1765-INCHANGE.pdf

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Datasheet Details

Part number:

2SD1765

Manufacturer:

INCHANGE

File Size:

208.35 KB

Description:

Npn transistor.

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