2SD1765 - NPN Transistor
*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) *Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max.) @IC= 1A *High DC Current Gain : hFE= 1000(Min.) @ IC= 1A, VCE= 2V *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
