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2SD1765 - NPN Transistor

2SD1765 Description

isc Silicon NPN Darlington Power Transistor 2SD1765 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min). Collector-Emitter Saturation Voltage- : VCE(sat)= 1. High DC.

2SD1765 Applications

* Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 2 A ICM Collector Cur

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Datasheet Details

Part number
2SD1765
Manufacturer
INCHANGE
File Size
208.35 KB
Datasheet
2SD1765-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD1765-like datasheet