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2SD1765 - NPN Transistor

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Part number 2SD1765
Manufacturer INCHANGE
File Size 208.35 KB
Description NPN Transistor
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Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max.) @IC= 1A High DC Current Gain : hFE= 1000(Min.) @ IC= 1A, VCE= 2V Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications.

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