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2SD1707 - NPN Transistor

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Part number 2SD1707
Manufacturer INCHANGE
File Size 214.00 KB
Description NPN Transistor
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Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) Good Linearity of hFE Low Collector Saturation Voltage- : VCE(sat)= 0.5V(Max.)@ IC= 8A Complement to Type 2SB1156 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 130 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-B

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