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2SD1712 Datasheet - INCHANGE

2SD1712 NPN Transistor

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) *Good Linearity of hFE *Wide Area of Safe Operation *Complement to Type 2SB1157 *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for high power amplifier appl.

2SD1712-INCHANGE.pdf

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Datasheet Details

Part number:

2SD1712

Manufacturer:

INCHANGE

File Size:

209.48 KB

Description:

Npn transistor.

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2SD1712 2SD1712 NPN Transistor INCHANGE

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