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2SD1712 - NPN Transistor

2SD1712 Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min). Good Linearity of hFE. Wide Area of Safe Operation. Complement to Type 2S.

2SD1712 Applications

* Designed for high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A ICP Collector Current-Puls

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Datasheet Details

Part number
2SD1712
Manufacturer
INCHANGE
File Size
209.48 KB
Datasheet
2SD1712-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD1712-like datasheet