2SD1712 Datasheet - INCHANGE

2SD1712, NPN Transistor

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min). Good Linearity of hFE. Wide Area of Safe Operation. Complement to Type 2S.

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2SD1712-INCHANGE.pdf

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Datasheet Details

Part number:

2SD1712

Manufacturer:

INCHANGE

File Size:

209.48 KB

Description:

NPN Transistor

Applications

* Designed for high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A ICP Collector Current-Puls

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2SD1712 NPN Transistor INCHANGE

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