2SD1717 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor 2SD1717 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min. Good Linearity of hFE. Wide Area of Safe Operation. Complement to Type 2.

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Datasheet Specifications

Part number: 2SD1717
Manufacturer: INCHANGE
File Size: 211.75 KB
Datasheet: 2SD1717-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 12 A ICP Collector Current-Pul

2SD1717 Distributors

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2SD1717 NPN Transistor INCHANGE

INCHANGE 2SD1717-like datasheet