2SD1705 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor 2SD1705 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min). Good Linearity of hFE. Low Collector Saturation Voltage- : VCE(sat)= 0.

📥 Download Datasheet

2SD1705 Datasheet Preview — Preview of 2SD1705 PDF

Datasheet Specifications

Part number: 2SD1705
Manufacturer: INCHANGE
File Size: 211.56 KB
Datasheet: 2SD1705-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for power switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 130 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A ICP Collector Current-Pulse Col

2SD1705 Distributors

📁 Related Datasheet

2SD1700 2SD1701 2SD1702 2SD1706 2SD1707 2SD1709

📌 All Tags

2SD1705 NPN Transistor INCHANGE

INCHANGE 2SD1705-like datasheet