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2SD1705 - NPN Transistor

2SD1705 Description

isc Silicon NPN Power Transistor 2SD1705 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min). Good Linearity of hFE. Low Collector Saturation Voltage- : VCE(sat)= 0.

2SD1705 Applications

* Designed for power switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 130 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A ICP Collector Current-Pulse Col

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Datasheet Details

Part number
2SD1705
Manufacturer
INCHANGE
File Size
211.56 KB
Datasheet
2SD1705-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD1705-like datasheet