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2SD1705

NPN Transistor

2SD1705 General Description


*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min)
*Good Linearity of hFE
*Low Collector Saturation Voltage- : VCE(sat)= 0.5V(Max.)@ IC= 6A
*Complement to Type 2SB1154
*Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
*De.

2SD1705 Datasheet (211.56 KB)

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Datasheet Details

Part number:

2SD1705

Manufacturer:

INCHANGE

File Size:

211.56 KB

Description:

Npn transistor.

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2SD1705 NPN Transistor INCHANGE

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