2SD1715 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor 2SD1715 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min. Good Linearity of hFE. Wide Area of Safe Operation. Complement to Type 2.

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Datasheet Specifications

Part number: 2SD1715
Manufacturer: INCHANGE
File Size: 210.08 KB
Datasheet: 2SD1715-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 9 A ICP Collector Current-Puls

2SD1715 Distributors

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2SD1715 NPN Transistor INCHANGE

INCHANGE 2SD1715-like datasheet