2SD1768S Datasheet - Rohm

2SD1768S Power Transistor

2SD1768S Features

* 1) High VCEO, VCEO=80V 2) High IC, IC=1A (DC) 3) Good hFE linearity 4) Low VCE (sat) 5) Complements the 2SB1260 / 2SB1241 / 2SB1181

* Structure Epitaxial planer type NPN silicon transistor

* Dimensions (Unit : mm) 2SD1898 4.5+

* 00..21 1.6±0.1 1.5

* +00..12 0.5±0.1 4.0±0.3 2.5

Datasheet Details

2SD1768S

167.95 KB

Power transistor.

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