2SD1769 Datasheet - Sanken electric

2SD1769 Silicon NPN Transistor

Darlington 2SD1769 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=120V VEB=6V IC=10mA VCE=2V, IC=3A IC=3A, IB=3mA IC=3A, IB=3mA VCE=12V, IE= 0.2A VCB=10V, f=1MHz 2SD1769 10max 20max 120min 2000min 1.5max 2.0max 100typ typ Equivalent circuit B C (2.5k Ω)(200 Ω) E Silicon NPN Triple Diffused Planar Transistor sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SD1769 120 120 6 6(Pulse10) 1 50(Tc=25°C) 150 <.

2SD1769 Datasheet (26.12 KB)