2SD2016 Datasheet - Sanken electric

2SD2016 Silicon NPN Transistor

2SD2016 Darlington Equivalent C circuit B (2kΩ) (200Ω) E Silicon NPN Triple Diffused Planar Transistor Application : Igniter, Relay and General Purpose sAbsolute maximum ratings (Ta=25°C) Symbol Ratings Unit VCBO 200 V VCEO 200 V VEBO 6 V IC 3 A IB 0.5 A PC 25(Tc=25°C) W Tj 150 °C Tstg 55 to +150 °C sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=200V VEB=6V IC=10mA VCE=4V, IC=1A IC=1A, IB=1.5mA IC=1A, I.

2SD2016_Sankenelectric.pdf