2SD2081 - Silicon NPN Transistor
Darlington 2SD2081 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=120V VEB=6V IC=10mA VCE=4V, IC=5A IC=5A, IB=5mA IC=5A, IB=5mA VCE=12V, IE= 0.5A VCB=10V, f=1MHz 2SD2081 10max 10max 120min 2000min 1.5max 2.0max 60typ 95typ V V MHz pF 13.0min Equivalent circuit B C (2k Ω) (200 Ω) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1259) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SD2
