2SD2082
Sanken ↗ electric
26.61 KB
Silicon npn transistor.
Darlington
2SD2082
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=120V VEB=6V IC=10mA VCE=4V, IC=8.
📁 Related Datasheet
2SD2081 - Silicon NPN Transistor
(Sanken electric)
Darlington
2SD2081
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=120V VEB=6V IC=10mA VCE=4V, IC=5.
2SD2081 - NPN Transistor
(INCHANGE)
isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·High DC Current Gain-
: hFE= 2000(Min)@ (VCE= 4V, IC= 5A) ·Large Current Capability ·Complem.
2SD2082 - NPN Transistor
(INCHANGE)
isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min) ·High DC Current Gain-
: hFE= 200.
2SD2082 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD2082
..
DESCRIPTION ·With TO-3PML package ·DARLING.
2SD2083 - Silicon NPN Transistor
(Sanken electric)
Darlington
2SD2083
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=120V VEB=6V IC=25mA VCE=4V, IC=1.
2SD2083 - NPN Transistor
(INCHANGE)
isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·High DC Current Gain
: hFE= 2000(Min.)@ IC= 12A, VCE= 4V ·High Collector-Emitter Breakdown V.
2SD2088 - Silicon NPN Transistor
(Toshiba Semiconductor)
2SD2088
TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power Transistor)
2SD2088
Micro Motor Drive, Hammer Drive Applications Switching Ap.
2SD2089 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·High Breakdown Voltage-
：VCBO= 1500V (Min) ·High Switching Speed ·Built-in Damper Diode ·Minimum Lot-to.
