2SD2083 - Silicon NPN Transistor
Darlington 2SD2083 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=120V VEB=6V IC=25mA VCE=4V, IC=12A IC=12A, IB=24mA IC=12A, IB=24mA VCE=12V, IE= 1A VCB=10V, f=1MHz 2SD2083 10max 10max 120min 2000min 1.8max 2.5max 20typ 340typ V MHz pF 5.45±0.1 B C E 20.0min 4.0max Equivalent circuit B C (2k Ω) (100 Ω) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1383) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VE
