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2SD200 NPN Transistor

2SD200 Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD200 .
High Collector-Base Breakdown Voltage- : V(BR)CBO= 1500V (Min. Low Collector Saturation Voltage. High Switching Speed. Minimum Lot-t.

2SD200 Applications

* Designed for color TV horizontal output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 2.5 A IE Emitter Current-

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Datasheet Details

Part number
2SD200
Manufacturer
INCHANGE
File Size
173.82 KB
Datasheet
2SD200-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD200-like datasheet