2SD200 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD200 .
High Collector-Base Breakdown Voltage- : V(BR)CBO= 1500V (Min. Low Collector Saturation Voltage. High Switching Speed. Minimum Lot-t.

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Datasheet Specifications

Part number: 2SD200
Manufacturer: INCHANGE
File Size: 173.82 KB
Datasheet: 2SD200-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for color TV horizontal output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 2.5 A IE Emitter Current-

2SD200 Distributors

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2SD200 NPN Transistor INCHANGE

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