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2SD2016 NPN Transistor

2SD2016 Description

isc Silicon NPN Darlington Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min). Collector-Emitter Saturation Voltage- : VCE(sat)= 1. High DC.

2SD2016 Applications

* Igniter, relay and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 3 A IB Base Current-Continuou

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Datasheet Details

Part number
2SD2016
Manufacturer
INCHANGE
File Size
206.49 KB
Datasheet
2SD2016-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD2016-like datasheet