2SD2016 Datasheet - INCHANGE

Datasheet Details

Part number:

2SD2016

Manufacturer:

INCHANGE

File Size:

206.49 KB

Description:

NPN Transistor

isc Silicon NPN Darlington Power Transistor DESCRIPTION *Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) *Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 1A *High DC Current Gain : hFE= 1000(Min) @ IC= 1A, VCE= 4V *Minimum Lot-to-Lot variations for robust

2SD2016-INCHANGE.pdf

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2SD2016, NPN Transistor

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) *Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 1A *High DC Current Gain : hFE= 1000(Min) @ IC= 1A, VCE= 4V *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS <

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