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2SD2021 Datasheet - INCHANGE

2SD2021 NPN Transistor

*High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V (Min) *Wide Area of Safe Operation *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for low frequency power amplifier TV vertical deflection output applications ABS.

2SD2021-INCHANGE.pdf

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Datasheet Details

Part number:

2SD2021

Manufacturer:

INCHANGE

File Size:

176.94 KB

Description:

Npn transistor.

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