2SD2021 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD2021 .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V (Min). Wide Area of Safe Operation. Minimum Lot-to-Lot variations for robust d.

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2SD2021 Datasheet Preview — Preview of 2SD2021 PDF

Datasheet Specifications

Part number: 2SD2021
Manufacturer: INCHANGE
File Size: 176.94 KB
Datasheet: 2SD2021-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for low frequency power amplifier TV vertical deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continu

2SD2021 Distributors

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2SD2021 NPN Transistor INCHANGE

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