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2SD2021 - NPN Transistor

2SD2021 Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD2021 .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V (Min). Wide Area of Safe Operation. Minimum Lot-to-Lot variations for robust d.

2SD2021 Applications

* Designed for low frequency power amplifier TV vertical deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continu

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Datasheet Details

Part number
2SD2021
Manufacturer
INCHANGE
File Size
176.94 KB
Datasheet
2SD2021-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD2021-like datasheet