2SD2012 NPN Transistor

INCHANGE

Description

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2012 .
High DC Current Gain- : hFE= 100 (Min)@ IC= 0. Low Saturation Voltage- : VCE(sat)= 1. High Power Dissipation : PC= 25 W(Max)@.

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Datasheet Specifications

Part number: 2SD2012
Manufacturer: INCHANGE
File Size: 205.20 KB
Datasheet: 2SD2012-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for audio frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A IB Base Current-Co

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2SD2012 NPN Transistor INCHANGE

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