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2SD2012 - NPN Transistor

2SD2012 Description

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2012 .
High DC Current Gain- : hFE= 100 (Min)@ IC= 0. Low Saturation Voltage- : VCE(sat)= 1. High Power Dissipation : PC= 25 W(Max)@.

2SD2012 Applications

* Designed for audio frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A IB Base Current-Co

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Datasheet Details

Part number
2SD2012
Manufacturer
INCHANGE
File Size
205.20 KB
Datasheet
2SD2012-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD2012-like datasheet