Datasheet4U Logo Datasheet4U.com

2SD2020 - NPN Transistor

2SD2020 Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD2020 .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V (Min). Wide Area of Safe Operation. Minimum Lot-to-Lot variations for robust d.

2SD2020 Applications

* Designed for low frequency power amplifier TV vertical deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continu

📥 Download Datasheet

Preview of 2SD2020 PDF
datasheet Preview Page 2

Datasheet Details

Part number
2SD2020
Manufacturer
INCHANGE
File Size
178.70 KB
Datasheet
2SD2020-INCHANGE.pdf
Description
NPN Transistor

📁 Related Datasheet

  • 2SD2023 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SD2024 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SD2025 - Silicon NPN Power Transistors (SavantIC)
  • 2SD2027 - Power Transistor (Inchange Semiconductor)
  • 2SD2028 - NPN Transistor (Sanyo Semicon Device)
  • 2SD2029 - Silicon NPN Transistor (Panasonic Semiconductor)
  • 2SD2000 - Silicon NPN Transistor (Panasonic Semiconductor)
  • 2SD2005 - NPN Transistor (ROHM)

📌 All Tags

NPN Transistor INCHANGE
INCHANGE 2SD2020-like datasheet