2SD2020 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD2020 .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V (Min). Wide Area of Safe Operation. Minimum Lot-to-Lot variations for robust d.

📥 Download Datasheet

2SD2020 Datasheet Preview — Preview of 2SD2020 PDF

Datasheet Specifications

Part number: 2SD2020
Manufacturer: INCHANGE
File Size: 178.70 KB
Datasheet: 2SD2020-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for low frequency power amplifier TV vertical deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continu

2SD2020 Distributors

📁 Related Datasheet

2SD2023 2SD2024 2SD2025 2SD2027 2SD2028 2SD2029

📌 All Tags

2SD2020 NPN Transistor INCHANGE

INCHANGE 2SD2020-like datasheet