2SD2027 Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor 2SD2027 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min). Good Linearity of hFE. Wide Area of Safe Operation. Complement to Type 2SB.

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Datasheet Specifications

Part number: 2SD2027
Manufacturer: Inchange Semiconductor
File Size: 209.36 KB
Datasheet: 2SD2027_InchangeSemiconductor.pdf
Description: Power Transistor

Applications

* Designed for low frequency and general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 3 A ICM C

2SD2027 Distributors

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2SD2027 Power Transistor Inchange Semiconductor

Inchange Semiconductor 2SD2027-like datasheet