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2SD2102 - Silicon NPN Power Transistor

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Part number 2SD2102
Manufacturer Inchange Semiconductor
File Size 154.89 KB
Description Silicon NPN Power Transistor
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Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) High DC Current Gain : hFE= 1000(Min) @ IC= 2A, VCE= 3V APPLICATIONS Designed for low frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V
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