2SD2102 Datasheet, Transistor, Inchange Semiconductor

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2SD2102

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Inchange Semiconductor

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📄 Datasheet

Description:

Silicon npn power transistor.

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min)

High DC Current Gain : hFE= 1000(Min) @ IC= 2A, VCE= 3V

2SD2102 Application

• Applications
• Designed for low frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCB

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2SD2102

Inchange Semiconductor

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