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2SD2102 Datasheet - Inchange Semiconductor

2SD2102 Silicon NPN Power Transistor

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) *High DC Current Gain : hFE= 1000(Min) @ IC= 2A, VCE= 3V APPLICATIONS *Designed for low frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V.

2SD2102-InchangeSemiconductor.pdf

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Datasheet Details

Part number:

2SD2102

Manufacturer:

Inchange Semiconductor

File Size:

154.89 KB

Description:

Silicon npn power transistor.

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2SD2102 2SD2102 Silicon NPN Power Transistor Inchange Semiconductor

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