2SD2102 Overview
Key Specifications
Max Operating Temp: 150 °C
Description
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) - High DC Current Gain : hFE= 1000(Min) @ IC= 2A, VCE= 3V.
| Part | 2SD2102 |
|---|---|
| Description | Silicon NPN Power Transistor |
| Category | Transistor |
| Manufacturer | Inchange Semiconductor |
| Size | 154.89 KB |
Pricing from 91.1353 USD, available from Win Source.
Price & Availability
| Seller | Inventory | Price Breaks | Buy |
|---|---|---|---|
| Win Source | 1200 | 1+ : 91.1353 USD 2+ : 74.777 USD 3+ : 72.4404 USD 4+ : 70.1039 USD |
View Offer |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| D2102 | Hitachi Semiconductor | 2SD2102 |
| 2SD2102 | Hitachi Semiconductor | Silicon NPN Triple Diffused Transistor |
| D2101 | Hitachi Semiconductor | 2SD2101 |
| D2103 | Hitachi Semiconductor | 2SD2103 |
| 2SD2103 | Hitachi Semiconductor | Silicon NPN Transistor |