| Part number | 2SD2102 |
|---|---|
| Datasheet | 2SD2102-InchangeSemiconductor.pdf |
| File Size | 154.89 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·High DC Current Gain : 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification 2SD2102 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-E.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SD2102 | Silicon NPN Triple Diffused Transistor | Hitachi Semiconductor |
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 2SD2110 | Power Transistor |
| 2SD2112 | Power Transistor |
| 2SD2113 | Power Transistor |
| 2SD2118 | Silicon NPN Power Transistor |
| 2SD2128 | Power Transistor |
| 2SD2140 | Power Transistor |
| 2SD2161 | Silicon NPN Power Transistor |
| 2SD2165 | Silicon NPN Power Transistor |
| 2SD218 | Silicon NPN Power Transistor |
| 2SD2027 | Power Transistor |
