2SD2102 Silicon NPN Power Transistor

Inchange Semiconductor

Description

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification 2SD2102 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min). High DC Current Gain : hFE= 1000(Min) @ IC= 2A, VCE= 3V APPLICATIONS. Designe.

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Datasheet Specifications

Part number: 2SD2102
Manufacturer: Inchange Semiconductor
File Size: 154.89 KB
Datasheet: 2SD2102-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for low frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7V IC Collector Current-Continuous 4A ICM Base Current-Peak Collec

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2SD2102 Silicon NPN Power Transistor Inchange Semiconductor

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