2SD2095 Datasheet - Inchange Semiconductor

2SD2095, Silicon NPN Power Transistors

isc Silicon NPN Power Transistor .
High Breakdown Voltage- ：VCBO= 1500V (Min). High Switching Speed. Low Saturation Voltage. Built-in Damper Diode. Minimum Lot-to-L.

Applications

* Designed for color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 5 A IB Base Current- Co

2SD2095_InchangeSemiconductor.pdf