2SD2033 Datasheet - Inchange Semiconductor

2SD2033, Silicon NPN Power Transistor

isc Silicon NPN Power Transistor .
Good Linearity of hFE. Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min). Complement to Type 2SB1353. Minimum Lot-to-Lot va.

Applications

* Designed for use in high voltage driver applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current-Continuous Collector Power Dissipation

2SD2033-InchangeSemiconductor.pdf