2SD2033 Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor .
Good Linearity of hFE. Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min). Complement to Type 2SB1353. Minimum Lot-to-Lot va.

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Datasheet Specifications

Part number: 2SD2033
Manufacturer: Inchange Semiconductor
File Size: 206.03 KB
Datasheet: 2SD2033-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for use in high voltage driver applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current-Continuous Collector Power Dissipation

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2SD2033 Silicon NPN Power Transistor Inchange Semiconductor

Inchange Semiconductor 2SD2033-like datasheet