Datasheet4U Logo Datasheet4U.com

2SD2094 - Power Transistor

2SD2094 Description

isc Silicon NPN Darlington Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min). Collector-Emitter Saturation Voltage- : VCE(sat)= 1. High DC.

2SD2094 Applications

* Designed for low frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 8 A ICM Collector Curr

📥 Download Datasheet

Preview of 2SD2094 PDF
datasheet Preview Page 2

📁 Related Datasheet

  • 2SD2091 - NPN Transistor (Rohm)
  • 2SD2092 - NPN TRANSISTOR (Toshiba Semiconductor)
  • 2SD2093 - NPN Transistor (INCHANGE)
  • 2SD2095 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SD2096 - NPN Transistor (Rohm)
  • 2SD2097 - Transistor (Rohm)
  • 2SD2098 - NPN Transistor (Rohm)
  • 2SD2099 - NPN Epitaxial Planar Silicon Transistor (Guangdong Kexin Industrial)

📌 All Tags

Power Transistor Inchange Semiconductor
Inchange Semiconductor 2SD2094-like datasheet

2SD2094 Stock/Price