Datasheet Details
- Part number
- 2SD2112
- Manufacturer
- Inchange Semiconductor
- File Size
- 197.50 KB
- Datasheet
- 2SD2112_InchangeSemiconductor.pdf
- Description
- Power Transistor
2SD2112 Description
isc Silicon NPN Darlington Power Transistor .
Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min).
Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.
High DC.
2SD2112 Applications
* Designed for low frequency power amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
120
V
VCEO
Collector-Emitter Voltage
120
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
6
A
ICM
Collector Curr
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