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2SD2112 - Power Transistor

2SD2112 Description

isc Silicon NPN Darlington Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min). Collector-Emitter Saturation Voltage- : VCE(sat)= 1. High DC.

2SD2112 Applications

* Designed for low frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 6 A ICM Collector Curr

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Power Transistor Inchange Semiconductor
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