2SD2114K
1.31MB
High-current gain medium power transistor.
TAGS
📁 Related Datasheet
2SD2114 - NPN Transistor
(JCST)
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
SOT-23 Plastic-Encapsulate Transistors
2SD2114 TRANSISTOR (NPN)
FEATURES z High DC current gain. z.
2SD2114 - NPN Transistor
(SeCoS)
Elektronische Bauelemente
2SD2114
0.5A , 25V NPN Plastic-Encapsulate Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-fre.
2SD2114K - Power Transistor
(Kexin)
SMD Type
TransistIoCrs
Power Transistor 2SD2114K
Features
High DC current gain. High emitter-base voltage. Low VCE (sat).
+0.12.4 -0.1
SOT-23
2.9.
2SD211 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD211
..
DESCRIPTION ·With TO-3 package ·Large curre.
2SD211 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD211
DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Sustaining Voltage-
: V.
2SD2110 - Power Transistor
(Inchange Semiconductor)
isc Silicon NPN Darlington Power Transistor
2SD2110
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min) ·Collector-Emitter Satura.
2SD2111 - Silicon NPN Transistor
(Hitachi Semiconductor)
..
2SD2111
Silicon NPN Triple Diffused
Application
Low frequency power amplifier
Outline
TO-220FM
2
1 1. Base 2. Collector 3. Em.
2SD2111 - NPN Transistor
(INCHANGE)
isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min) ·Collector-Emitter Saturation Vol.
2SD2112 - Power Transistor
(Inchange Semiconductor)
isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min) ·Collector-Emitter Saturation Vol.
2SD2113 - Power Transistor
(Inchange Semiconductor)
isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min) ·Collector-Emitter Saturation Volt.