Datasheet4U Logo Datasheet4U.com

2SD2113 Power Transistor

📥 Download Datasheet  Datasheet Preview Page 1

Description

isc Silicon NPN Darlington Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min). Collector-Emitter Saturation Voltage- : VCE(sat)= 1. High D.

📥 Download Datasheet

Preview of 2SD2113 PDF
datasheet Preview Page 2

Datasheet Specifications

Part number
2SD2113
Manufacturer
Inchange Semiconductor
File Size
197.58 KB
Datasheet
2SD2113_InchangeSemiconductor.pdf
Description
Power Transistor

Applications

* Designed for low frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A ICM Collector Curr

2SD2113 Distributors

📁 Related Datasheet

📌 All Tags

Inchange Semiconductor 2SD2113-like datasheet