Datasheet4U Logo Datasheet4U.com

2SD2113 - Power Transistor

2SD2113 Description

isc Silicon NPN Darlington Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min). Collector-Emitter Saturation Voltage- : VCE(sat)= 1. High D.

2SD2113 Applications

* Designed for low frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A ICM Collector Curr

📥 Download Datasheet

Preview of 2SD2113 PDF
datasheet Preview Page 2

📁 Related Datasheet

  • 2SD211 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SD2111 - Silicon NPN Transistor (Hitachi Semiconductor)
  • 2SD2114 - NPN Transistor (JCST)
  • 2SD2114K - High-current Gain Medium Power Transistor (Rohm)
  • 2SD2115 - Silicon NPN Epitaxial Planar Transistor (Hitachi Semiconductor)
  • 2SD2115L - Silicon NPN Transistor (Hitachi Semiconductor)
  • 2SD2115S - Silicon NPN Transistor (Hitachi Semiconductor)
  • 2SD2116 - NPN Epitaxial Planar Silicon Transistor (Sanyo Semicon Device)

📌 All Tags

Power Transistor Inchange Semiconductor
Inchange Semiconductor 2SD2113-like datasheet