2SD2110 Datasheet - Inchange Semiconductor

2SD2110, Power Transistor

isc Silicon NPN Darlington Power Transistor 2SD2110 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min). Collector-Emitter Saturation Voltage- : VCE(sat)= 1. High DC C.

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Datasheet Details

Part number:

2SD2110

Manufacturer:

Inchange Semiconductor

File Size:

198.39 KB

Description:

Power Transistor

Applications

* Designed for low frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 4 A ICM Collector Curren

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2SD2110 Power Transistor Inchange Semiconductor

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