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2SD2110 - Power Transistor

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Part number 2SD2110
Manufacturer Inchange Semiconductor
File Size 198.39 KB
Description Power Transistor
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Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 2A High DC Current Gain : hFE= 1000(Min) @ IC= 2A, VCE= 3V Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80

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