2SD2110 Datasheet, Transistor, Inchange Semiconductor

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2SD2110

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Inchange Semiconductor

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📄 Datasheet

Description:

Power transistor.

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min)

Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Ma

2SD2110 Application

• Applications
• Designed for low frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCB

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2SD2110

Inchange Semiconductor

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