2SD2140 Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min). Wide Area of Safe Operation. Complement to Type 2SB1421. Minimum Lot-to-L.

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Datasheet Specifications

Part number: 2SD2140
Manufacturer: Inchange Semiconductor
File Size: 202.97 KB
Datasheet: 2SD2140_InchangeSemiconductor.pdf
Description: Power Transistor

Applications

* Designed for high power amplifications.
* Optimum for the output stage of a HiFi audio amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 140 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 5 V IC Collector C

2SD2140 Distributors

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2SD2140 Power Transistor Inchange Semiconductor

Inchange Semiconductor 2SD2140-like datasheet