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2SD2140 - Power Transistor

2SD2140 Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min). Wide Area of Safe Operation. Complement to Type 2SB1421. Minimum Lot-to-L.

2SD2140 Applications

* Designed for high power amplifications.
* Optimum for the output stage of a HiFi audio amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 140 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 5 V IC Collector C

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