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2SD2144 - High-current Gain Medium Power Transistor

2SD2144 Description

Transistors High-current Gain Medium Power Transistor (20V, 0.5A) 2SD2114K / 2SD2144S F.

2SD2144 Features

* 1) High DC current gain. hFE = 1200 (Typ. ) 2) High emitter-base voltage. VEBO = 12V (Min. ) 3) Low VCE(sat). VCE(sat) = 0.18V (Typ. ) (IC / IB = 500mA / 20mA) FStructure Epitaxial planar type NPN silicon transistor FExternal dimensions (Units: mm) (96-232-C107) 232 Transistors FAbsolute maximum rat

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Datasheet Details

Part number
2SD2144
Manufacturer
ROHM ↗
File Size
124.29 KB
Datasheet
2SD2144_Rohm.pdf
Description
High-current Gain Medium Power Transistor

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High-current Gain Medium Power Transistor Rohm
Rohm 2SD2144-like datasheet