Part number:
2SD2144
Manufacturer:
File Size:
124.29 KB
Description:
High-current gain medium power transistor.
* 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO = 12V (Min.) 3) Low VCE(sat). VCE(sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) FStructure Epitaxial planar type NPN silicon transistor FExternal dimensions (Units: mm) (96-232-C107) 232 Transistors FAbsolute maximum rat
2SD2144
124.29 KB
High-current gain medium power transistor.
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