2SD2144 - High-current Gain Medium Power Transistor

Product Overview

Rohm

Part number	2SD2144
Manufacturer	ROHM
File Size	124.29 KB
Description	High-current Gain Medium Power Transistor
Datasheet	2SD2144 Datasheet
Additional preview pages of the 2SD2144 datasheet.

1) High DC current gain. hFE = 1200 (Typ. ) 2) High emitter-base voltage. VEBO = 12V (Min. ) 3) Low VCE(sat). VCE(sat) = 0.18V (Typ. ) (IC / IB = 500mA / 20mA) FStructure Epitaxial planar type NPN silicon transistor FExternal dimensions (Units: mm) (96-232-C107) 232 Transistors FAbsolute maximum ratings (Ta = 25_C) 2SD2114K / 2SD2144S FElectrical characteristics (Ta = 25_C) FPackaging specifications and hFE FElectrical characteristic curves hFE values are classified as follows : 233 Trans.

📁 Similar Datasheet

2SD214 - NPN Transistor (INCHANGE)
2SD2140 - Power Transistor (Inchange Semiconductor)
2SD2141 - NPN Transistor (INCHANGE)
2SD2142 - Silicon NPN Transistor (GME)
2SD2148 - NPN Transistor (INCHANGE)
2SD2100 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
2SD2101 - Silicon NPN Transistor (Hitachi Semiconductor)
2SD2102 - Silicon NPN Power Transistor (Inchange Semiconductor)

Other Datasheets by Rohm

Published: Apr 3, 2005 |