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2SD214 - NPN Transistor

2SD214 Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD214 .
Excellent Safe Operating Area. Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min. Low Collector Saturation Voltage. High S.

2SD214 Applications

* Designed for high power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 130 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 10 A ICP Collector

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Datasheet Details

Part number
2SD214
Manufacturer
INCHANGE
File Size
189.36 KB
Datasheet
2SD214-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD214-like datasheet