Datasheet Details
| Part number | 2SD2105 |
|---|---|
| Manufacturer | INCHANGE |
| File Size | 197.26 KB |
| Description | Silicon NPN Darlington Power Transistor |
| Datasheet |
 2SD2105 Datasheet
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| Part number | 2SD2105 |
|---|---|
| Manufacturer | INCHANGE |
| File Size | 197.26 KB |
| Description | Silicon NPN Darlington Power Transistor |
| Datasheet |
2SD2105 Datasheet
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Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 5A High DC Current Gain : hFE= 1000(Min) @ IC= 5A, VCE= 3V Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 1
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