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2SD2105 - Silicon NPN Darlington Power Transistor

2SD2105 Description

isc Silicon NPN Darlington Power Transistor 2SD2105 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min). Collector-Emitter Saturation Voltage- : VCE(sat)= 1. High DC.

2SD2105 Applications

* Designed for low frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A ICM Collector Cur

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Datasheet Details

Part number
2SD2105
Manufacturer
INCHANGE
File Size
197.26 KB
Datasheet
2SD2105-INCHANGE.pdf
Description
Silicon NPN Darlington Power Transistor

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Silicon NPN Darlington Power Transistor INCHANGE
INCHANGE 2SD2105-like datasheet