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2SD2105

Silicon NPN Darlington Power Transistor

2SD2105 General Description


*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min)
*Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 5A
*High DC Current Gain : hFE= 1000(Min) @ IC= 5A, VCE= 3V
*Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS .

2SD2105 Datasheet (197.26 KB)

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Datasheet Details

Part number:

2SD2105

Manufacturer:

INCHANGE

File Size:

197.26 KB

Description:

Silicon npn darlington power transistor.

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2SD2105 Silicon NPN Darlington Power Transistor INCHANGE

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