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2SD2105 Datasheet - INCHANGE

2SD2105 Silicon NPN Darlington Power Transistor

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) *Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 5A *High DC Current Gain : hFE= 1000(Min) @ IC= 5A, VCE= 3V *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS .

2SD2105-INCHANGE.pdf

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Datasheet Details

Part number:

2SD2105

Manufacturer:

INCHANGE

File Size:

197.26 KB

Description:

Silicon npn darlington power transistor.

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2SD2105 2SD2105 Silicon NPN Darlington Power Transistor INCHANGE