2SD2103
Hitachi Semiconductor
58.36 KB
Silicon npn transistor.
2SD2103
Silicon NPN Triple Diffused
www.DataSheet4U.com
Application
Low frequency power amplifier
Outline
TO-220FM
2
1 1. Base 2. Collector 3. Em.
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Ordering number:EN3176A
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2SD2101 - Silicon NPN Transistor
(Hitachi Semiconductor)
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Silicon NPN Triple Diffused
Application
Low frequency power amplifier
Outline
TO-220FM
2
1 1. Base 2. Collector 3. Emitter
12 3
3 kΩ (Ty.
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Product Specification
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2SD2101
..
DESCRIPTION ·With TO-220Fa package ·DARLIN.
2SD2101 - NPN Transistor
(INCHANGE)
isc Silicon NPN Darlington Power Transistor
2SD2101
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 200V(Min) ·Collector-Emitter Satur.
2SD2102 - Silicon NPN Power Transistor
(Inchange Semiconductor)
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD2102
DESCRIPTION ·Collector-Emitter Breakdown Voltag.
2SD2102 - Silicon NPN Triple Diffused Transistor
(Hitachi Semiconductor)
2SD2102
Transient Thermal Resistance Thermal resistance θj-c (°C/W)
10
3 TC = 25°C 1.0
0.3
0.1 1m
10m
100m
1.0
10
100
1000
Time t (s)
.
2SD2104 - Silicon NPN Transistor
(Hitachi Semiconductor)
2SD2104
Silicon NPN Triple Diffused
Application
Low frequency power amplifier
Outline
TO-220FM
2
1 1. Base 2. Collector 3. Emitter
12 3
2 kΩ (Ty.
2SD2104 - NPN Transistor
(INCHANGE)
I
isc Silicon NPN Darlington Power Transistor
2SD2104
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min) ·Collector-Emitter Sat.
