2SD2114 Datasheet, Transistor, JCST

2SD2114 Features

• Transistor z High DC current gain. z High emitter-base voltage. z Low VCE (sat). MARKING: BBV,BBW MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC Tj Tstg Parameter

PDF File Details

Part number:

2SD2114

Manufacturer:

JCST

File Size:

259.51kb

Download:

📄 Datasheet

Description:

Npn transistor.

TAGS

2SD2114

JCST

📁 Related Datasheet

2SD211 - SILICON POWER TRANSISTOR (SavantIC)
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD211 .. DESCRIPTION ·With TO-3 package ·Large curre.

2SD211 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD211 DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Sustaining Voltage- : V.

2SD2110 - Power Transistor (Inchange Semiconductor)
isc Silicon NPN Darlington Power Transistor 2SD2110 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Collector-Emitter Satura.

2SD2111 - Silicon NPN Transistor (Hitachi Semiconductor)
.. 2SD2111 Silicon NPN Triple Diffused Application Low frequency power amplifier Outline TO-220FM 2 1 1. Base 2. Collector 3. Em.

2SD2111 - NPN Transistor (INCHANGE)
isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Collector-Emitter Saturation Vol.

2SD2112 - Power Transistor (Inchange Semiconductor)
isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Collector-Emitter Saturation Vol.

2SD2113 - Power Transistor (Inchange Semiconductor)
isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Collector-Emitter Saturation Volt.

2SD2114 - NPN Transistor (SeCoS)
Elektronische Bauelemente 2SD2114 0.5A , 25V NPN Plastic-Encapsulate Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-fre.

2SD2114K - High-current Gain Medium Power Transistor (Rohm)
2SD2114K High-current Gain Medium Power Transistor (20V, 500mA) Parameter VCEO IC Value 20V 0.5A lFeatures 1)High DC current gain 2)High emitter-ba.

2SD2114K - Power Transistor (Kexin)
SMD Type TransistIoCrs Power Transistor 2SD2114K Features High DC current gain. High emitter-base voltage. Low VCE (sat). +0.12.4 -0.1 SOT-23 2.9.