2SD2111 Datasheet - INCHANGE

2SD2111, NPN Transistor

isc Silicon NPN Darlington Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min). Collector-Emitter Saturation Voltage- : VCE(sat)= 1. High D.

datasheet Preview Page 1 from Datasheet4u.com

2SD2111-INCHANGE.pdf

2SD2111 Datasheet Preview — Preview of 2SD2111 PDF

Datasheet Details

Part number:

2SD2111

Manufacturer:

INCHANGE

File Size:

193.50 KB

Description:

NPN Transistor

Applications

* Designed for low frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A ICM Collector Curr

2SD2111 Distributors

📁 Related Datasheet

2SD211 2SD2110 2SD2112 2SD2113 2SD2114 2SD2114K

📌 All Tags

2SD2111 NPN Transistor INCHANGE

INCHANGE 2SD2111-like datasheet