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2SD2101 - NPN Transistor

2SD2101 Description

isc Silicon NPN Darlington Power Transistor 2SD2101 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min). Collector-Emitter Saturation Voltage- : VCE(sat)= 1. High DC.

2SD2101 Applications

* Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A ICM Collector Cu

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Datasheet Details

Part number
2SD2101
Manufacturer
INCHANGE
File Size
193.98 KB
Datasheet
2SD2101-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD2101-like datasheet