Datasheet Details
- Part number
- 2SD2101
- Manufacturer
- INCHANGE
- File Size
- 193.98 KB
- Datasheet
- 2SD2101-INCHANGE.pdf
- Description
- NPN Transistor
2SD2101 Description
isc Silicon NPN Darlington Power Transistor 2SD2101 .
Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 200V(Min).
Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.
High DC.
2SD2101 Applications
* Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
200
V
VCEO
Collector-Emitter Voltage
200
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
10
A
ICM
Collector Cu
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