2SD2101 - NPN Transistor
*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) *Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 5A *High DC Current Gain : hFE= 1500(Min) @ IC= 5A, VCE= 3V *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
