Datasheet4U Logo Datasheet4U.com

2SD2129 Datasheet - INCHANGE

2SD2129 NPN Transistor

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) *Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 1.5A *High DC Current Gain : hFE= 2000(Min) @ IC= 1.5A, VCE= 3V *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIO.

2SD2129-INCHANGE.pdf

Preview of 2SD2129 PDF
2SD2129 Datasheet Preview Page 2

Datasheet Details

Part number:

2SD2129

Manufacturer:

INCHANGE

File Size:

191.33 KB

Description:

Npn transistor.

📁 Related Datasheet

2SD2120 NPN Epitaxial Planar Silicon Transistor (Sanyo Semicon Device)

2SD2121 Silicon NPN Epitaxial Planar Transistor (Hitachi Semiconductor)

2SD2121L Silicon NPN Epitaxial Planar Transistor (Hitachi Semiconductor)

2SD2121S Silicon NPN Epitaxial Planar Transistor (Hitachi Semiconductor)

2SD2122 Silicon NPN Transistor (Hitachi Semiconductor)

2SD2122L Silicon NPN Transistor (Hitachi Semiconductor)

2SD2122S Silicon NPN Transistor (Hitachi Semiconductor)

2SD2123 Silicon NPN Transistor (Hitachi Semiconductor)

TAGS

2SD2129 2SD2129 NPN Transistor INCHANGE

2SD2129 Distributor