2SD2106 NPN Transistor

INCHANGE

Description

isc Silicon NPN Darlington Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min). Collector-Emitter Saturation Voltage- : VCE(sat)= 1. High DC.

📥 Download Datasheet

2SD2106 Datasheet Preview — Preview of 2SD2106 PDF

Datasheet Specifications

Part number: 2SD2106
Manufacturer: INCHANGE
File Size: 193.76 KB
Datasheet: 2SD2106-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for low frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 6 A ICM Collector Curr

2SD2106 Distributors

📁 Related Datasheet

2SD2100 2SD2101 2SD2102 2SD2103 2SD2104 2SD2105

📌 All Tags

2SD2106 NPN Transistor INCHANGE

INCHANGE 2SD2106-like datasheet