2SD213 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD213 .
Excellent Safe Operating Area. Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 80V(Min. Low Collector Saturation Voltage. High Sw.

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Datasheet Specifications

Part number: 2SD213
Manufacturer: INCHANGE
File Size: 189.42 KB
Datasheet: 2SD213-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for high power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 110 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 10 A ICP Collector C

2SD213 Distributors

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2SD213 NPN Transistor INCHANGE

INCHANGE 2SD213-like datasheet