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2SD213 - NPN Transistor

2SD213 Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD213 .
Excellent Safe Operating Area. Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 80V(Min. Low Collector Saturation Voltage. High Sw.

2SD213 Applications

* Designed for high power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 110 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 10 A ICP Collector C

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Datasheet Details

Part number
2SD213
Manufacturer
INCHANGE
File Size
189.42 KB
Datasheet
2SD213-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD213-like datasheet