2SD2131 Datasheet - Toshiba Semiconductor

2SD2131 Silicon NPN Transistor

TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington) 2SD2131 2SD2131 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A) Zener diode included between collector and base. Unclamped inductive load energy: E = 150 mJ (min) Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rati.

2SD2131_ToshibaSemiconductor.pdf