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2SD2130 Datasheet - Toshiba Semiconductor

2SD2130_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

2SD2130

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

154.44 KB

Description:

Silicon npn transistor.

2SD2130 - Silicon NPN Transistor

2SD2130 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington power transistor) 2SD2130 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit: mm High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A, IB = 10 mA) Zener diode included between collector and base.

Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Em

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