2SD2130 Datasheet - Toshiba Semiconductor

2SD2130 Silicon NPN Transistor

2SD2130 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington power transistor) 2SD2130 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit: mm High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A, IB = 10 mA) Zener diode included between collector and base. Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Em.

2SD2130_ToshibaSemiconductor.pdf