Datasheet Details
- Part number
- 2SD2130
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 154.44 KB
- Datasheet
- 2SD2130_ToshibaSemiconductor.pdf
- Description
- Silicon NPN Transistor
2SD2130 Description
2SD2130 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington power transistor) 2SD2130 Micro Motor Drive, Hammer Drive Applications Switching Ap.
2SD2130 Applications
* Switching Applications Power Amplifier Applications
Unit: mm
* High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)
* Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A, IB = 10 mA)
* Zener diode included between collector and base. Maximum Ratings (Ta = 25°C)
Characte
📁 Related Datasheet
📌 All Tags