2SD2130 Datasheet - Toshiba Semiconductor

2SD2130, Silicon NPN Transistor

2SD2130 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington power transistor) 2SD2130 Micro Motor Drive, Hammer Drive Applications Switching Ap.

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2SD2130_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

2SD2130

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

154.44 KB

Description:

Silicon NPN Transistor

Applications

* Switching Applications Power Amplifier Applications Unit: mm
* High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)
* Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A, IB = 10 mA)
* Zener diode included between collector and base. Maximum Ratings (Ta = 25°C) Characte

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2SD2130 Silicon NPN Transistor Toshiba Semiconductor

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