2SD2133 Datasheet - Panasonic Semiconductor

2SD2133 Silicon NPN Transistor

Power Transistors 2SD2133 Silicon NPN epitaxial planar type For low-frequency power amplification driver 7.5±0.2 Unit: mm 4.5±0.2 Low collector-emitter saturation voltage VCE(sat) 10.8±0.2 0.65±0.1 16.0±1.0 Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature S.

2SD2133 Features

* 3.8±0.2 0.8 C 0.7±0.1 0.7±0.1 1.15±0.2 1.15±0.2 0.5±0.1 0.8 C 1 2 3 2.05±0.2 0.4±0.1 2.5±0.2 2.5±0.2 1: Emitter 2: Collector 3: Base MT-3-A1 Package

* Electrical Characteristics TC = 25°C ± 3°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter

2SD2133_PanasonicSemiconductor.pdf