* 3.8±0.2 0.8 C 0.7±0.1 0.7±0.1 1.15±0.2 1.15±0.2
* Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction tempe
2SD2136
Panasonic Semiconductor
86.33 KB
Silicon npn transistor.
Power Transistors
2SD2136
Silicon NPN triple diffusion planar type
For power amplification Complementary to 2SB1416
7.5±0.2
Unit: mm
4.5±0.2
16.0±1.
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7.5±0.2
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MaDinistecnoanntincuee/ d Maintenance/Discontinued ipnPlcallenuaedsdepesmmlavfanaoihsieilntnilttodtptefweo:dnd/nil/inaliwsaosgncncwwcocofiwoenennut.gt.
2SD2136 - NPN SILICON TRANSISTOR
(UTC)
UNISONIC TECHNOLOGIES CO., LTD
2SD2136
NPN SILICON TRANSISTOR
POWER TRANSISTOR
DESCRIPTION
The UTC 2SD2136 is designed for power application.
.
2SD2136 - NPN Transistor
(SeCoS)
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3A , 60V NPN Plastic Encapsulated Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free.
