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2SD2129 Datasheet - Toshiba Semiconductor

2SD2129 Silicon NPN Transistor

TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington) 2SD2129 2SD2129 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm High DC current gain: hFE = 2000 (min) Low saturation voltage: VCE (sat) = 1.5 V (max) Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 100 V Collector-emitter voltage VCEO 100 V Emitter-base voltage VEBO 7 V Collector current DC IC 3 A Pul.

2SD2129_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

2SD2129

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

134.62 KB

Description:

Silicon npn transistor.

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2SD2129 2SD2129 Silicon NPN Transistor Toshiba Semiconductor

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