2SD2129 Silicon NPN Transistor

Toshiba Semiconductor

Description

TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington) 2SD2129 2SD2129 High-Power Switching Applications Hammer Drive, Pulse Motor Drive A.

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Datasheet Specifications

Part number: 2SD2129
Manufacturer: Toshiba ↗ Semiconductor
File Size: 134.62 KB
Datasheet: 2SD2129_ToshibaSemiconductor.pdf
Description: Silicon NPN Transistor

Applications

* Hammer Drive, Pulse Motor Drive Applications Unit: mm
* High DC current gain: hFE = 2000 (min)
* Low saturation voltage: VCE (sat) = 1.5 V (max) Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 100 V Collector-emitter volta

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2SD2129 Silicon NPN Transistor Toshiba Semiconductor

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