2SD2012 Datasheet, Transistor, Toshiba Semiconductor

PDF File Details

Part number:

2SD2012

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

121.20kb

Download:

📄 Datasheet

Description:

Npn transistor.

Datasheet Preview: 2SD2012 📥 Download PDF (121.20kb)
Page 2 of 2SD2012 Page 3 of 2SD2012

2SD2012 Application

  • Applications 2SD2012 Unit: mm
  • Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 2A / IB = 0.2A)
  • High power dissipation: P

TAGS

2SD2012
NPN
Transistor
Toshiba Semiconductor

📁 Related Datasheet

2SD201 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD201 DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Sustaining Voltage- : V.

2SD201 - SILICON POWER TRANSISTOR (SavantIC)
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD201 .. DESCRIPTION ·With TO-3 package ·Large curre.

2SD2010 - NPN Transistor (ROHM)
.

2SD2012 - NPN Silicon Power Transistor (STMicroelectronics)
® 2SD2012 NPN SILICON POWER TRANSISTOR s HIGH DC CURRENT GAIN s LOW SATURATION VOLTAGE s INSULATED PACKAGE FOR EASY MOUNTING APPLICATIONS s GENERAL.

2SD2012 - SILICON POWER TRANSISTOR (SavantIC)
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2012 .. DESCRIPTION ·With TO-220F package ·Complem.

2SD2012 - NPN Transistor (INCHANGE)
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2012 DESCRIPTION ·High DC Current Gain- : hFE= 100 (Min)@ IC= 0.5A ·Low Saturation Volta.

2SD2012 - NPN Silicon Power Transistors (MCC)
MCC TM Micro Commercial Components      omponents 20736 Marilla Street Chatsworth  # $ % # .

2SD2014 - Silicon NPN Transistor (Sanken electric)
2SD2014 Darlington Equivalent C circuit B (3kΩ) (200Ω) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1257) Application : Dr.

2SD2014 - SILICON POWER TRANSISTOR (SavantIC)
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2014 .. DESCRIPTION ·With TO-220F package ·DARLING.

2SD2014 - NPN Transistor (INCHANGE)
isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Collector-Emitter Saturation Volt.

Stock and price

part
STMicroelectronics
TRANS NPN 60V 3A TO-220F
DigiKey
2SD2012
0 In Stock
0
Unit Price : $0
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts