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2SD2012 NPN Transistor

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Description

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power Amplifier Applications 2SD2012 Unit: mm * Low saturation v.

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Applications

* 2SD2012 Unit: mm
* Low saturation voltage: VCE (sat) = 0.4 V (typ. ) (IC = 2A / IB = 0.2A)
* High power dissipation: PC = 25 W (Tc = 25°C) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base vo

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2SD2012 NPN Transistor Toshiba Semiconductor
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