Part number:
2SD2012
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
121.20 KB
Description:
Npn transistor.
2SD2012_ToshibaSemiconductor.pdf
Datasheet Details
2SD2012_ToshibaSemiconductor.pdf
Datasheet Details
Part number:
2SD2012
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
121.20 KB
Description:
Npn transistor.
2SD2012, NPN Transistor
TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power Amplifier Applications 2SD2012 Unit: mm Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 2A / IB = 0.2A) High power dissipation: PC = 25 W (Tc = 25°C) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Ta = 25°C Tc = 25°C Junct
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