2SD2019 Datasheet (Hitachi Semiconductor)

2SD2019, Silicon NPN Transistor

2SD2019 Silicon NPN Epitaxial Application Low frequency power amplifier Outline TO-126 MOD 2 3 1.

Emitter 2.

Collector 3.

Base ID 15 kΩ (Typ) 0.5 kΩ (Typ) 1 1 2 3 2SD2019 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature C to E diode forward current Note: 1.

Value at TC = 25°C.

Symbol VCBO VCEO VEBO IC I C(pea