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2SD2019 Datasheet - Hitachi Semiconductor

2SD2019 Silicon NPN Transistor

2SD2019 Silicon NPN Epitaxial Application Low frequency power amplifier Outline TO-126 MOD 2 3 1. Emitter 2. Collector 3. Base ID 15 kΩ (Typ) 0.5 kΩ (Typ) 1 1 2 3 2SD2019 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature C to E diode forward current Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C(pea.

2SD2019_HitachiSemiconductor.pdf

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Datasheet Details

Part number:

2SD2019

Manufacturer:

Hitachi Semiconductor

File Size:

32.63 KB

Description:

Silicon npn transistor.

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