* High forward current transfer ratio hFE
* Built-in 60 V Zener diode between base to collector φ 3.16±0.1 3.8±0.3 11.0±0.5 1.9±0.1
* Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (
2SD2018
Panasonic Semiconductor
78.38 KB
Silicon npn transistor.
Power Transistors
2SD2018
Silicon NPN epitaxial planar type darlington
For low-frequency amplification
8.0+0.5
*0.1
Unit: mm
3.2±0.2
* .
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