Datasheet Details
- Part number
- 2SD2018
- Manufacturer
- Panasonic Semiconductor
- File Size
- 78.38 KB
- Datasheet
- 2SD2018_PanasonicSemiconductor.pdf
- Description
- Silicon NPN Transistor
2SD2018 Description
Power Transistors 2SD2018 Silicon NPN epitaxial planar type darlington For low-frequency amplification 8.0+0.5 *0.1 Unit: mm 3.2±0.2 * .
2SD2018 Features
* High forward current transfer ratio hFE
* Built-in 60 V Zener diode between base to collector
φ 3.16±0.1
3.8±0.3 11.0±0.5
1.9±0.1
* Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (
2SD2018 Applications
* or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications:
* Special applications (such as for airplanes, aerospace, automobiles, traff
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