2SD2018 Silicon NPN Transistor

Panasonic Semiconductor

Description

Power Transistors 2SD2018 Silicon NPN epitaxial planar type darlington For low-frequency amplification 8.0+0.5 *0.1 Unit: mm 3.2±0.2 * .

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Datasheet Specifications

Part number: 2SD2018
Manufacturer: Panasonic Semiconductor
File Size: 78.38 KB
Datasheet: 2SD2018_PanasonicSemiconductor.pdf
Description: Silicon NPN Transistor

Features

* High forward current transfer ratio hFE
* Built-in 60 V Zener diode between base to collector φ 3.16±0.1 3.8±0.3 11.0±0.5 1.9±0.1
* Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (

Applications

* or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications:
* Special applications (such as for airplanes, aerospace, automobiles, traff

2SD2018 Distributors

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2SD2018 Silicon NPN Transistor Panasonic Semiconductor

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