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2SD2092 - NPN TRANSISTOR

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Part number 2SD2092
Manufacturer Toshiba Semiconductor
File Size 185.71 KB
Description NPN TRANSISTOR
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2SD2092 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SD2092 Switching Applications Lamp, Solenoid Drive Applications Unit: mm • • High DC current gain: hFE (1) = 500 to 1500 Low collector saturation voltage: VCE (sat) = 0.3 V (max) Absolute Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25°C Tc = 25°C DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating 100 100 7 3 5 1 2.0 25 150 −55 to 150 Unit V V V A A W °C °C JEDEC JEITA TOSHIBA ― SC-67 2-10R1A Weight: 1.7 g (typ.) Note: Using continuously under heavy loads (e.g.
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