2SD2092 Datasheet - Toshiba Semiconductor

2SD2092 NPN TRANSISTOR

2SD2092 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SD2092 Switching Applications Lamp, Solenoid Drive Applications Unit: mm High DC current gain: hFE (1) = 500 to 1500 Low collector saturation voltage: VCE (sat) = 0.3 V (max) Absolute Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25°C Tc = 25.

2SD2092_ToshibaSemiconductor.pdf