2SD2012 Description
TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power Amplifier Applications 2SD2012 Unit: mm Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 2A / IB = 0.2A) High power dissipation:.
2SD2012 Datasheet
| Part number | 2SD2012 |
|---|---|
| Download | 2SD2012 Datasheet (PDF) |
| File Size | 121.20 KB |
| Manufacturer | Toshiba |
| Description | NPN Transistor |
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