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2SD2015 Darlington
Equivalent C circuit B
(3kΩ) (500Ω) E
Silicon NPN Triple Diffused Planar Transistor
Application : Driver for Solenoid, Relay and Motor and General Purpose
sAbsolute maximum ratings (Ta=25°C)
Symbol
Ratings
Unit
VCBO
150
V
VCEO
120
V
VEBO
6
V
IC
4
A
IB
0.5
A
PC
25(Tc=25°C)
W
Tj
150
°C
Tstg
–55 to +150
°C
sElectrical Characteristics
Symbol
Conditions
ICBO
VCB=150V
IEBO
VEB=6V
V(BR)CEO hFE
IC=10mA VCE=2V, IC=2A
VCE(sat)
IC=2A, IB=2mA
VBE(sat)
IC=2A, IB=2mA
fT
VCE=12V, IE=–0.1A
COB
VCB=10V, f=1MHz
(Ta=25°C)
Ratings
Unit
10max
µA
10max
mA
120min
V
2000min
1.5max
V
2.
2SD2015 Datasheet
