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2SD2014 Darlington
Equivalent C circuit B
(3kΩ) (200Ω) E
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1257) Application : Driver for Solenoid, Relay and Motor, Series Regulator, and General Purpose
sAbsolute maximum ratings (Ta=25°C)
Symbol
Ratings
Unit
VCBO
120
V
VCEO
80
V
VEBO
6
V
IC
4
A
IB
0.5
A
PC
25(Tc=25°C)
W
Tj
150
°C
Tstg
–55 to +150
°C
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB
Conditions VCB=120V
VEB=6V IC=10mA VCE=2V, IC=3A IC=3A, IB=3mA IC=3A, IB=3mA VCE=12V, IE=–0.1A VCB=10V, f=1MHz
(Ta=25°C)
Ratings 10max 10max 80min
2000min 1.5max 2.
2SD2014 Datasheet
