Datasheet Details
| Part number | 2SD2017 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 205.44 KB |
| Description | NPN Transistor |
| Datasheet | 2SD2017-INCHANGE.pdf |
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Overview: isc Silicon NPN Darlington Power Transistor 2SD2017.
| Part number | 2SD2017 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 205.44 KB |
| Description | NPN Transistor |
| Datasheet | 2SD2017-INCHANGE.pdf |
|
|
|
·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 250V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 2A ·High DC Current Gain : hFE= 2000(Min) @ IC= 2A, VCE= 2V ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed of driver of solenoid, relay and motor, and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 20 V IC Collector Current-Continuous 6 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 35 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor 2SD2017 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA ;
IB= 0 250 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A;
Compare 2SD2017 distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SD2017 | Silicon NPN Transistor | Sanken electric |
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2SD2017 | SILICON POWER TRANSISTOR | SavantIC |
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