2SD2017 Description
·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 250V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 2A ·High DC Current Gain.
2SD2017 Datasheet
| Part number | 2SD2017 |
|---|---|
| Download | 2SD2017 Datasheet (PDF) |
| File Size | 205.44 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
|
|